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摘要

PURPOSE: To accomplish excellent selectivity in the MOVPE selective growth of Al-containing compound semiconductor crystal, and also to accomplish selective burying growth, having uniform composition, in the MOVPE selective burying growth of Al-containing compound semiconductor crystal. ;CONSTITUTION: An SiN_x mask 2 is formed on a GaAs substrate 1, and GaAlAs is selectively grown by MOVPE using dimethylalumihydride DMAlH as Al raw material. The reaction between the Al raw material and mask material is prevented, and the mask material of the Al raw material can be reevaporated. As a result, in the ordinary reduced-pressure condition, excellent selectivity can be obtained without using HCl gas having a problem with its purity.;COPYRIGHT: (C)1995,JPO