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DUAL I/O LOGIC FOR HIGH VOLTAGE CMOS CIRCUIT USING LOW VOLTAGE CMOS PROCESSES

机译:使用低压CMOS工艺的高压CMOS电路的双I / O逻辑

摘要

CMOS transistor logic circuitry (20/22) is permitted to operate at higher power supply voltages while retaining lower voltage processing geometries by providing each input signal as dual input signals (28/36) that track each other within two different voltage ranges. A shield voltage (40/42) is provided approximately midway between the uppermost and lowermost power supply voltages (34/26). The first input signal (28) ranges between the lowermost power supply voltage (26) and the shield voltage (40), and the second input signal (36) ranges between the shield voltage (40) and the uppermost power supply voltage (34). The first and second input signals (28/36) drive the gates of n-channel and p-channel CMOS switching transistors (24/32), respectively, the drain terminals of which are coupled to first and second output terminals (30/38), respectively. N-channel and p-channel shield transistors (44/46) are connected in series between the first and second output terminals (30/38), and have their gate terminals coupled to the shield voltage (40/42).
机译:通过提供每个输入信号作为在两个不同电压范围内相互跟踪的双输入信号(28/36),允许CMOS晶体管逻辑电路(20/22)在较高的电源电压下运行,同时保持较低的电压处理几何形状。大约在最高和最低电源电压(34/26)之间的中间位置提供了一个屏蔽电压(40/42)。第一输入信号(28)在最低电源电压(26)和屏蔽电压(40)之间,第二输入信号(36)在屏蔽电压(40)和最高电源电压(34)之间。 。第一和第二输入信号(28/36)分别驱动n沟道和p沟道CMOS开关晶体管(24/32)的栅极,其漏极端子耦合到第一和第二输出端子(30/38) ), 分别。 N沟道和P沟道屏蔽晶体管(44/46)串联连接在第一和第二输出端子(30/38)之间,并且其栅极端子耦合到屏蔽电压(40/42)。

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