A cleaning method of a semiconductor wafer using an improved cleaning solution and a cleaning solution for removing metallic contaminants and organic contaminants from a semiconductor wafer

摘要

The present invention relates to a method for removing metal contaminants and organic contaminants from a semiconductor wafer surface, including cleaning a semiconductor wafer with a cleaning solution containing a chlorine compound acting as an oxidant and having a pH ranging from 1 to 3. The oxidation-reduction potential of the cleaning solution is in the range of 800 to 1200 mV when measured on a saturated calomel electrode at 25C.