Mechanically strained multiquantum well semiconductor laser device

摘要

The laser is formed with a multi quantum well, MQW, layer (3) that consists of alternate layers of 5nm thick well regions and 5nm thick barrier layers. At least one transition region between a well region and a barrier region are provided on both sides of the main region to which a mechanical strain is applied. The mechanical strain is varied gradually along the border region from the main region to the neighbouring well and barrier layers in the direction of the border region. The difference in the strain between the initial and neighbouring layers is smaller than the difference in the mechanical strain between its main region and the main region of the neighbouring layers.