Brief description of embodiments of a semi - conductor with a zone strongly located between areas lightly doped, for the manufacture of the transistors

• 1. N型轻掺杂区域的形成方法及半导体器件的制造方法 [P] . 中国专利： CN101572235B . 2011.11.30
• 2. N型轻掺杂区域的形成方法及半导体器件的制造方法 [P] . 中国专利： CN101572235A . 2009-11-04
• 3. Method of producing a semi-conductor with a highly doped zone situated between lightly doped zones, for the manufacture of transistors [P] . 美国专利： US5705410A . 1998-01-06

  机译： 用于制造具有在轻掺杂区之间的高掺杂区的半导体的方法，用于制造晶体管

• 4. To the embodiment of a zone doped of a type of conductivity in a semi - conductor, as well as a transistor manufactured according to this [P] . 法国专利： FR2288391B1 . 1982-10-01

  机译： 对于在半导体中掺杂有导电类型的区域的实施例以及根据此制造的晶体管

• 5. To the embodiment of a zone doped of a type of conductivity in a semi - conductor, as well as a transistor manufactured according to this [P] . 法国专利： FR2288391A1 . 1976-05-14

  机译： 对于在半导体中掺杂有导电类型的区域的实施例以及根据该方法制造的晶体管

• 1. Tunneling leakage current reduction in junctionless transistors using a lightly doped region near drain [C] . Wenjie Chen, Renrong Liang, Jing Wang, International Symposium on Next Generation Electronics . 2018
• 2. Concentration dependence of hopping conduction in lightly doped semiconductor. [D] . Zhang, Yang. 2010
• 3. Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor [O] . Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, 2021
• 4. Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor [O] . Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, 2021

• 1. 应用于半导体制造的Z-PINCH等离子体EUV光源 [C] . 吕鹏 ,张潮海 ,程元丽 . 2007中国电机工程学会高电压专委会学术年会 . 2007
• 2. 金属氧化物半导体薄膜晶体管的氢掺杂探究与双层结构设计 [A] . 何佳威 . 2019