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Method of measuring the amount of capacitive coupling of RF power in an inductively coupled plasma
Method of measuring the amount of capacitive coupling of RF power in an inductively coupled plasma
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机译:测量电感耦合等离子体中射频功率电容耦合量的方法
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摘要
The amount of capacitive coupling of RF power to a semiconductor substrate or wafer in an inductively coupled RF plasma reactor is quantitatively measured by separating the RF current from the plasma through the wafer pedestal into the Fourier components including the fundamental frequency (F) of the RF power and the second harmonic (2F) of the frequency of the RF power and then measuring the current or power of the fundamental component. As an additional feature, the amount of inductive coupling is measured by measuring the current or power of the second harmonic.
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