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Semiconductor suitsuchingu device

机译:塞米苏祖与伊斯

摘要

PURPOSE:To decrease an ON-state voltage, to widen a safe operating area, and to realize fast switching by providing the bypass of a gate current for turn-on between the base and the emitter of a transistor. CONSTITUTION:When the gate current for turn on is permitted to flow by using a gate circuit 3, the current flows in the gate terminal 8 of an arc- suppressing switching device 1, and flows out from the cathode terminal of the device 1, and returns to the circuit 3 bypassing a resistor 4 or a diode 5. Thereby, the device 1 is turned on, and it is possible to permit the current to flow on a load connected to a power source to be connected to an anode terminal 6 and the cathode terminal 7. Next, when the gate current for turning off the device 1 is permitted to flow from a terminal 8, a reverse bypass is formed between the gate and the cathode, and a depletion layer is formed, then, the device 1 is turned off. As a result, the transistor 2 is turned off, and no load current flows.
机译:目的:通过提供栅极电流的旁路以在晶体管的基极和发射极之间导通,以降低导通电压,扩大安全工作范围并实现快速切换。组成:当使用栅极电路3允许导通的栅极电流流动时,电流在消弧开关设备1的栅极端子8中流动,并从设备1的阴极端子流出,绕过电阻器4或二极管5返回到电路3。由此,装置1导通,并且可以允许电流在连接到电源的负载上流动以连接到阳极端子6,并且阴极端子7。接着,当允许从端子8流过用于关闭器件1的栅极电流时,在栅极和阴极之间形成反向旁路,并形成耗尽层,然后,器件1已关闭。结果,晶体管2截止,并且没有负载电流流动。

著录项

  • 公开/公告号JP2744015B2

    专利类型

  • 公开/公告日1998-04-28

    原文格式PDF

  • 申请/专利权人 株式会社日立製作所;

    申请/专利号JP19880147024

  • 发明设计人 寺沢 義雄;

    申请日1988-06-16

  • 分类号H03K17/732;H03K17/567;H03K17/73;

  • 国家 JP

  • 入库时间 2022-08-22 02:59:47

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