Integrated emitter drain bypass capacitor for microwave/rf power device applications

摘要

An integrated power bipolar transistor circuit for microwave/RF applications is disclosed. A "thermal run-away" problem is avoided by providing the transistor with two emitter contacts (E1 and E2). E1 and E2 are respectively connected to a bypass capacitor and a ballast resistor in a parallel configuration. According to the invention the bypass capacitor is integrated on a silicon pedestal of a heterolithic microwave integrated circuit (HMIC) glass substrate. Connection of the bypass capacitor with the bipolar transistor emitter contacts is made using a flip-chip technique. This results in a flip-chip HMIC bipolar power transistor circuit having improved thermal stability and gain.