首页> 外国专利> METHOD AND DEVICE FOR THE DEPOSIT OF AT LEAST ONE FILM OF INTRINSIC MICROCRYSTALLINE OR NANOCRYSTALLINE HYDROGENATED SILICON AND PHOTOVOLTAIC CELL OBTAINED BY THIS METHOD

METHOD AND DEVICE FOR THE DEPOSIT OF AT LEAST ONE FILM OF INTRINSIC MICROCRYSTALLINE OR NANOCRYSTALLINE HYDROGENATED SILICON AND PHOTOVOLTAIC CELL OBTAINED BY THIS METHOD

机译:通过该方法获得的至少一层本征微晶或纳米晶氢化硅和光伏电池的沉积方法和装置

摘要

The device (10) comprises a deposition chamber (12) containing two electrodes (13, 14), one of which comprises a support (16) for a substrate (17) and is earthed, the other being connected to an electric radio frequency generator (15). The device includes a mechanism (23) for extracting gas from the chamber (12) and a mechanism (18) for supplying gas. The device also comprises a mechanism for purification (31) of the gases introduced into the chamber, these a mechanism being arranged so as to reduce the number of oxygen atoms contained in the deposition gas, such gas being made up of silane, hydrogen and/or argon. The procedure consists of creating a vacuum in the deposition chamber (12), purifying the gases using purification a mechanism (31), introducing these purified gases into the chamber (12), then creating a plasma between the electrodes (13, 14). A film of intrinsic microcrystalline silicon in then deposited on the substrate.
机译:装置(10)包括沉积室(12),该沉积室包含两个电极(13、14),其中一个电极包括用于基板(17)的支撑件(16)并接地,另一个连接至射频发生器(15)。该装置包括用于从腔室(12)抽取气体的机构(23)和用于供给气体的机构(18)。该装置还包括用于净化(31)引入到腔室中的气体的机构,布置这些机构以减少沉积气体中包含的氧原子的数量,该气体由硅烷,氢和/或气体组成。或氩气。该过程包括在沉积室(12)中产生真空,使用净化机构(31)净化气体,将这些净化后的气体引入室(12),然后在电极(13、14)之间产生等离子体。然后将本征微晶硅膜沉积在基底上。

著录项

  • 公开/公告号EP0871979A1

    专利类型

  • 公开/公告日1998-10-21

    原文格式PDF

  • 申请/专利权人 UNIVERSITE DE NEUCHATEL;

    申请/专利号EP19960934294

  • 发明设计人 MEIER JOHANN;KROLL ULRICH;

    申请日1996-10-30

  • 分类号H01L31/20;H01L31/075;

  • 国家 EP

  • 入库时间 2022-08-22 02:48:52

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