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the crux of the problem in the study of chemical polishing.

机译:化学抛光研究中问题的症结所在。

摘要

according to the invention, in order to achieve high precision, a chemical mechanical polishing of semiconductor device manufacturing, especially in the formation of a wiring layer for chemical mechanical polishing, high grinding rate display, the choice of insulation film and the etching of high marks, and the light is.... neutral display, semiconductor device properties become inferior to metal containing component, and the price of the special chemical reagent is not necessary, but also on the human body harmful substances, the main component of the disease is not uacc4uc5f0ub9c8 chemical polishing to provide a water the task is solved, and the means of checking, organic content, oxidizing agent and water and saline of ph 5 to 9, the court will be a feature.
机译:根据本发明,为了实现高精度,在半导体器件的制造中进行化学机械抛光,特别是在形成用于化学机械抛光的布线层,高研磨速率显示,选择绝缘膜和蚀刻高标记的过程中中性显示,半导体器件的性能变得不如含金属的成分,而且不需要特殊化学试剂的价格,而且对人体有害的物质,该病的主要成分是不进行化学抛光以提供水的任务得以解决,而检查手段,有机物含量,氧化剂以及水和盐水的pH值5至9,将是一个特征。

著录项

  • 公开/公告号KR19980018410A

    专利类型

  • 公开/公告日1998-06-05

    原文格式PDF

  • 申请/专利权人 오오하시 미쯔오;

    申请/专利号KR19970037458

  • 发明设计人 키도 타카노리;

    申请日1997-08-06

  • 分类号C09K13/06;

  • 国家 KR

  • 入库时间 2022-08-22 02:48:34

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