A memory suitable for operation at a low supply voltage and a sense amplifier for this memory (suitable for operation at low power supply voltages and sense amplifiers)

摘要

The memory 400 includes current-to-voltage converters 512 and 513 coupled to multiple bit lines, a common current source 548 to form a current reference, and a sense amplifier 500 formed with a common latch comparator 530, . A column decode selection circuit 515 for selecting one of the multiple bit lines is interposed between the current-to-voltage converters 512 and 513 and one input of the common latch comparator 530. The distribution of the sense amplifier 500 components allows operation at low supply voltages. The sense amplifier 500 uses a clamping and loading device to set a first rate of discharge on one reference input of the common latch comparator 530. The state of the selected memory cell sets a second discharge rate on the other input of the common latch comparator 530 and this second discharge rate is greater or less than the first discharge rate depending on the state of the memory cell in question. The common latch comparator 530 portion also performs a dual function as a latch during the program mode.