focusing on the concept FEA with silicon and their manufacturing method

摘要

The present invention relates to the patterning method of manufacturing a silicon FEA having the focusing gate, a disk-like after forming the oxide film 11 on the silicon substrate 10; Step to the oxide film 11 as a mask to anisotropically etch the silicon substrate 10 to a predetermined depth; The method comprising using a back process to form a nitride film 12 only on the side wall - after application of the nitride film 12, the photoresist etch; The step of isotropically etching the silicon substrate 10; Forming a thermal oxide film 13 and the pointed tip (14) by removing the nitride film 12 of the side sections, and thermal oxidation; Applying a thermal oxidation film 13, a polycrystalline silicon (15) above, and the photoresist etch-step of forming a gate electrode by using a back process; Depositing a nitride film 16, the photoresist etch-back step of using the process to form a nitride film 16 only on the side wall; The method comprising using a back process forms the upper focusing gate-depositing a top focusing gate oxide film 17 and the metal film 18 and the photoresist etch; Further comprising: a nitride film (16) around the tip removed using a wet etching process; And lift a thermal oxide film (13) around the tip-off by a step of exposing the sharp emitter tip 14.