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SELF-ALIGNMENT METHOD USED IN MICROELECTRONICS AND APPLICATION TO THE PRODUCTION OF A FOCUSING GRID FOR MICROPROFIT FLAT SCREEN
SELF-ALIGNMENT METHOD USED IN MICROELECTRONICS AND APPLICATION TO THE PRODUCTION OF A FOCUSING GRID FOR MICROPROFIT FLAT SCREEN
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机译:微电子学中的自对准方法及其在微利平板筛网生产中的应用
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摘要
The invention relates to a self-alignment method that can be used in microelectronics to obtain the alignment of at least one group of two holes, one of these holes (or hole of large diameter) being formed in an upper level and the other of these holes (or small diameter hole) being formed in a lower level of a stacked structure. It consists of: BR/ - providing a conductive layer in the structure, the conductive layer being connectable to an external electrical circuit, BR/ - depositing an insulating layer on the conductive layer, BR/ - piercing the insulating layer of a hole of said small diameter and reaching the conductive layer, BR/ - performing electrolytic deposition of conductive material in the small diameter hole, the conductive layer serving as an electrode during the electrolysis, the deposition electrolytic filling the small diameter hole from the conductive layer and projecting over the insulating layer to give the electrolytically deposited conductive material the shape of a mushroom whose cap rests on the insulating layer, the electroplating being conducted until that the diameter of the cap reaches the dimension of the large diameter, BR/ - deposit on the structure obtained a layer of a material of a different nature from that of the material c electrolytically deposited undulator, BR/ - elimination of the mushroom, this elimination leaving, in the last layer deposited, a hole of large diameter aligned on the hole of small diameter. / P
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