首页> 外国专利> SELF-ALIGNMENT METHOD USED IN MICROELECTRONICS AND APPLICATION TO THE PRODUCTION OF A FOCUSING GRID FOR MICROPROFIT FLAT SCREEN

SELF-ALIGNMENT METHOD USED IN MICROELECTRONICS AND APPLICATION TO THE PRODUCTION OF A FOCUSING GRID FOR MICROPROFIT FLAT SCREEN

机译:微电子学中的自对准方法及其在微利平板筛网生产中的应用

摘要

The invention relates to a self-alignment method that can be used in microelectronics to obtain the alignment of at least one group of two holes, one of these holes (or hole of large diameter) being formed in an upper level and the other of these holes (or small diameter hole) being formed in a lower level of a stacked structure. It consists of: BR/ - providing a conductive layer in the structure, the conductive layer being connectable to an external electrical circuit, BR/ - depositing an insulating layer on the conductive layer, BR/ - piercing the insulating layer of a hole of said small diameter and reaching the conductive layer, BR/ - performing electrolytic deposition of conductive material in the small diameter hole, the conductive layer serving as an electrode during the electrolysis, the deposition electrolytic filling the small diameter hole from the conductive layer and projecting over the insulating layer to give the electrolytically deposited conductive material the shape of a mushroom whose cap rests on the insulating layer, the electroplating being conducted until that the diameter of the cap reaches the dimension of the large diameter, BR/ - deposit on the structure obtained a layer of a material of a different nature from that of the material c electrolytically deposited undulator, BR/ - elimination of the mushroom, this elimination leaving, in the last layer deposited, a hole of large diameter aligned on the hole of small diameter. / P
机译:本发明涉及一种自对准方法,该方法可用于微电子学中以获得至少一组两个孔的对准,这些孔中的一个(或大直径的孔)形成在上层,而另一个在堆叠结构的下部形成孔(或小直径孔)。它包括:
-在结构中提供导电层,该导电层可连接到外部电路,
-在导电层上沉积绝缘层,
-刺穿绝缘层所述小直径并到达导电层的孔的层,
-在小直径孔中进行导电材料的电解沉积,在电解过程中,导电层充当电极,沉积的电解填充小直径孔从绝缘层上伸出并突出到绝缘层上,以使电解沉积的导电材料具有蘑菇状的形状,其帽顶在绝缘层上,进行电镀直至帽的直径达到大直径的尺寸,< BR />-在结构上沉积一层性质与电解沉积波荡器材料不同的材料,
-消除蘑菇,这种消除在沉积的最后一层中留下一个大直径的孔,该孔对准小直径的孔。

著录项

  • 公开/公告号FR2757999A1

    专利类型

  • 公开/公告日1998-07-03

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A LENERGIE ATOMIQUE;

    申请/专利号FR19960016196

  • 发明设计人 AIME PERRIN;BRIGITTE MONTMAYEUL;

    申请日1996-12-30

  • 分类号H01J9/02;H01J29/08;

  • 国家 FR

  • 入库时间 2022-08-22 02:41:44

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