Thin film composite having ferromagnetic and piezoelectric properties comprising a layer of Pb-Cd-Fe and a layer of Cr-Zn-(Te or Tl)

摘要

A composition of materials having ferromagnetic and piezoelectric properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub. x Fe.sub.y and a second layer of Cr.sub.(1-z-w) Zn.sub.z Te.sub.w where x, y, z and w are values within the ranges of 0.38≦x≦0.042, 0.08≦y. ltoreq.0.094, 0.38≦z≦0.41, 0.28≦w≦0.31, and 0. 25≦(1-z-w) ≦0.32. Additionally, each of the layers contain the elements of Bi, O, and S. A random-accessible, non-volatile memory built using the This memory provides for storing two independent bits of binary information in a single storage cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.