PROXIMITY EFFECT CORRECTION MASK AND PROXIMITY EFFECT CORRECTION METHOD

摘要

PROBLEM TO BE SOLVED: To improve the performance of semiconductor devices and the yield of production by providing a proximity effect correction mask and proximity effect correction method capable of additionally improving the dimensional accuracy of resist patterns. ;SOLUTION: Patterns 11 for a correction rule consisting of plural element patterns are superposed on mask patterns and are compared therewith. Correction parameter values are determined from the area values of the overlap with the mask patterns for each of the respective element patterns. The mask pattern edges are then corrected by using the sets of the correction parameter values and a conversion table. Since the correction is executed with the optimum correction rates to meet the shapes of the patterns, the dimensional accuracy of the patterns is improved.;COPYRIGHT: (C)1999,JPO