首页> 外国专利> SYNTHESIS OF COMPOUND SEMICONDUCTOR POLYCRYSTAL AND COMPOUND SEMICONDUCTOR POLYCRYSTAL SYNTHESIZED BY THE SYNTHESIS METHOD

SYNTHESIS OF COMPOUND SEMICONDUCTOR POLYCRYSTAL AND COMPOUND SEMICONDUCTOR POLYCRYSTAL SYNTHESIZED BY THE SYNTHESIS METHOD

机译:复合半导体多晶的合成及合成方法合成的半导体多晶

摘要

PROBLEM TO BE SOLVED: To make preventable the shift of a peek position of temperature when relatively moving an ampul and a heater, thereby make the feed of a groove V element coincide with the synthetic rate and synthesize a polycrystal having a composition stoichiometric over a wide range of the starting end to the terminal end. ;SOLUTION: The relative movement of an ampul is carried out at a speed in the middle of synthesis lower than that in the initial synthesis in the method for synthesizing a polycrystal comprising vacuum sealing a boat carrying a group III element of a raw material at one end of the ampul and a group V element of the raw material placed in the other end, heating the whole ampul, locally heating the boat to a higher temperature, reacting the group III element with the vapor of the group V element produced from the group V element in the boat and synthesizing the III-V semiconductor polycrystal while slowly relatively moving the high-temperature part.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:为了防止安瓿和加热器相对移动时温度的偷看位置的移动,从而使槽V元素的进料与合成速率一致,并在宽范围内合成化学计量组成的多晶起点到终点的范围。 ;解决方案:在合成多晶的方法中,安瓿的相对运动是在合成过程中以低于初始合成的速度进行的,该方法包括真空密封载有第III族元素元素的舟皿。安瓿的另一端,原料的V组元素放在另一端,加热整个安瓿,将舟皿局部加热到更高的温度,使III组元素与由该组产生的V组元素的蒸气反应舟中的V元素并合成III-V半导体多晶,同时缓慢地相对移动高温部分。;版权所有:(C)1999,JPO

著录项

  • 公开/公告号JPH11268904A

    专利类型

  • 公开/公告日1999-10-05

    原文格式PDF

  • 申请/专利权人 JAPAN ENERGY CORP;

    申请/专利号JP19980369051

  • 发明设计人 KANAZAWA TOSHIYUKI;HIRANO RYUICHI;

    申请日1993-02-16

  • 分类号C01B25/08;

  • 国家 JP

  • 入库时间 2022-08-22 02:34:53

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