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PRODUCTION OF GRAPHITE BASE MATERIAL FOR BETA-SILICON CARBIDE MOLDED PRODUCT AND GRAPHITE BASE MATERIAL FOR BETA-SILICON CARBIDE MOLDED PRODUCT AND BETA-SILICON CARBIDE MOLDED PRODUCT
PRODUCTION OF GRAPHITE BASE MATERIAL FOR BETA-SILICON CARBIDE MOLDED PRODUCT AND GRAPHITE BASE MATERIAL FOR BETA-SILICON CARBIDE MOLDED PRODUCT AND BETA-SILICON CARBIDE MOLDED PRODUCT
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机译:生产β-碳化硅模压产品用的石墨基材料和β-碳化硅模压产品和β-碳化硅模压产品的石墨基材料
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摘要
PROBLEM TO BE SOLVED: To provide a graphite base material of raw material optimal for obtaining substantially 100% SiC molded product by the performance of a CVR method, to provide a method for producing the graphite base material, enabling the efficient production of the graphite base material, and to provide an extremely highly pure SiC molded product capable of being sufficiently applied as a raw material for the field of semiconductors. ;SOLUTION: This method for producing a graphite base material for β-SiC molded products comprises grinding a raw material for the graphite base material, kneading the ground product, molding the kneaded product, calcining the molded product and subsequently graphitizing the calcined product. Therein, the raw material for the graphite base material is thermally treated at a high temperature (≥2,000°C), ground, classified into a fraction having particle diameters of at least 3-100 μm, and subsequently kneaded. Thus, the β-silicon carbide molded product having a bulk density of ≤1.50 Mg/m3, an average pore radius of ≥1.5 μm, a true density of ≤1.8 μm is obtained. The obtained graphite base material is treated by a CVR method to obtain the SiC molded product, which has impurity concentrations (Fe, Al concentrations) comprising a Fe concentration of ≤0.5 ppm and an Al concentration of ≤0.1 ppm and has an ash of ≤10 ppm.;COPYRIGHT: (C)1999,JPO
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机译:解决的问题:提供最适合通过CVR方法获得基本上100%的SiC成型品的原料的石墨基体,提供一种能够有效地制造石墨基体的石墨基体的制造方法。提供一种极高纯度的SiC模制产品,该产品能够充分用作半导体领域的原材料。 ;解决方案:该用于生产β-SiC模制产品的石墨基材的方法包括:研磨石墨基材的原料,捏合研磨产品,模制捏合产品,煅烧模制产品并随后将煅烧产品石墨化。其中,将石墨基材的原料在高温(≥2,000℃)下进行热处理,研磨,分类为粒径为3〜100μm以上的级分,然后进行混炼。因此,获得了堆积密度≤1.50Mg / m 3 Sup>,平均孔半径≥1.5μm,真实密度≤1.8μm的β-碳化硅成型体。通过CVR方法处理所获得的石墨基材,从而获得SiC成型体,该SiC成型体的杂质浓度(Fe,Al浓度)的Fe浓度为≤0.5ppm,Al浓度为≤0.1ppm,且灰分为≤ 10 ppm .;版权:(C)1999,日本特许厅
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