Method of determining the generative lifetime of minority carriers.

摘要

1. The method of determining the generation lifetime of minority carriers, designed for semiconductor structures with a thyristor. The method consists in the measurement of the leakage current of the PN junction in the blocking direction, depending on the voltage at the junction for determined gate potentials, followed by the determination of the derivative of the leakage current of the PN juncture. Unique characteristics: The state of depletion is obtained under the gate of the thyristor by means of a gate potential. Then, the characteristics of the leakage current are measured, depending on the voltage at the PN junction. Then, the following dependence is used to determine the generation lifetime in the depleted area: where: t - generation lifetime, x - the width of the depleted region, A - the area of the depleted region, I - leakage current, q - electronic charge, ni - spontaneous concentration of carriers, K = 1 or 2 (depending on the assumed description of the generation process).