Surface emitting vertical cavity laser with a wavelength between 1,3 and 1,5 micrometer and its realisation

摘要

A 1.3-1.55 mu m vertical cavity surface emission laser device has a stack consisting of one or more emitted radiation amplifying layers (4) interposed between two mirrors (2, 6) which are reflective wrt. the emission wavelength. The novelty is that at least one (2) of the mirrors includes, near the amplifying medium (4), a layer (2a) of AlxGa1-xAs (x = 0.8-1, pref. 1) which is selectively oxidised (2ai, 2aii) around an active central zone of the amplifying medium (4). Also claimed is a process for prodn. of the above device by (a) epitaxial growth of a n-doped InP layer (3), one or more amplifying layers (4), a p-doped InP layer (5) and a final InGaAsP layer on an InP substrate; (b) epitaxial growth of at least one layer (2a) of AlxGa1-xAs (x = 0.8-1) and a final GaAs layer on a GaAs substrate; (c) assembly of the substrates by heat treatment to effect epitaxial bonding of the GaAs layer of the second substrate to an InP layer of the first substrate; (d) selective mesa etching such that the surface between the mesas is the AlxGa1-xAs layer (2a); (e) oxidn. of the AlxGa1-xAs layer (2a) by hydrolysis such that the layer is selectively oxidised around an active central zone of the amplifying medium (4); and (f) metallising the upper face of the mesas.