Copolymer for matrix resin of chemically amplified positive photoresist composition and chemically amplified photoresist composition containing the same

摘要

The present invention relates to a copolymer having a repeating unit represented by the following general formula (I), and a chemically amplified positive photoresist composition comprising the copolymer and a photoacid generator.;[Formula 1];M, and n are numbers representing repeating units, 0.1 T / m + n 0.5, 0 M / + N 0.5, and 0.1 N / + M 0.9.;The present invention improves the anti-etching property by introducing an alicyclic chain into a polyacrylate derivative having a low light absorption at 193 nm. By introducing a hydroxyl group-introduced monomer, the adhesion is improved, and the concentration of the developer It was possible to develop without changing. Thus, the present invention provides a copolymer that is easy to synthesize, and a chemically amplified resist is prepared using the copolymer as a main component. As a result, a resist pattern excellent in high resolution and anti-etching property can be obtained regardless of the type of the substrate.