Platinum thin film whose orientation is controlled and a method for manufacturing an electronic device having such a platinum thin film and an electronic device provided with a platinum thin film and a platinum thin film formed by the method

摘要

In forming the platinum thin film on the substrate, the platinum thin film is deposited in a single step in an atmosphere containing a mixture of nitrogen and oxygen in an argon, which is an inert gas, to form a platinum thin film containing a mixture of nitrogen and oxygen and heat treated. Form a pure platinum thin film from which nitrogen and oxygen mixtures have been removed, or deposit it in multiple stages, particularly in two stages. Disclosed are a platinum thin film manufacturing method for forming a platinum thin film containing nitrogen and oxygen components in an atmosphere, followed by heat treatment to form a pure platinum thin film, and a method of manufacturing an electronic device having such a platinum thin film. The first stage deposition of the pressure ratio of nitrogen and oxygen mixed components to the total gas including argon, nitrogen and oxygen mixed components, the temperature at the time of deposition of the platinum thin film, subsequent heat treatment conditions and the total thickness when forming the platinum thin film. The orientation of the platinum thin film is controlled by changing any one of the thicknesses of the platinum thin film formed by.