A novel maleimide or alicyclic olefin-based monomer, a copolymer resin of these monomers, and a photoresist using this resin

摘要

The present invention relates to the production of a photoresist in a photolithography process using an ArF (193 nm) or KrF (248 nm) light source which is expected to be applied to 1G and 4G in the fabrication of microcircuits of highly integrated semiconductor devices, Maleimide can be used to facilitate copolymerization with aliphatic cyclic olefins, to allow development in a tetramethylammonium hydroxide (TMAH) developer, and to introduce functional groups to increase the adhesion to the maleimide Thereby greatly increasing the adhesiveness of the photoresist, thereby enabling highly integrated semiconductor devices.