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METHOD FOR NONDESTRUCTIVE MEASUREMENT OF MINORITY CARRIER DIFFUSION LENGTH AND MINORITY CARRIER LIFETIME IN SEMICONDUCTOR DEVICES
METHOD FOR NONDESTRUCTIVE MEASUREMENT OF MINORITY CARRIER DIFFUSION LENGTH AND MINORITY CARRIER LIFETIME IN SEMICONDUCTOR DEVICES
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机译:半导体器件中少数族裔扩散长度和少数族裔生存时间的非破坏性测量方法
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摘要
The present invention relates to a method of minority carrier diffusion length and hence the non-destructive measurement of the minority carrier lifetime (Op) in accordance with the semiconductor device. The method includes testing a semiconductor device that is; in points in accordance with the step of scanning the focused beam, the length of the beam DUT of the radiation energy along the length of the steps, a semiconductor device washing the station via (semiconductor device under test DUT) a semiconductor device by the beam as it passes through, in points that the beams to generate a step of detecting a current induced in the DUT by the beam, the signal waveform (I signal) along the length of the scanning of the semiconductor element as it passes through detecting a current induced and determining the minority carrier diffusion length (Lp) and thus minority carrier lifetime (Op) in accordance with the I signal from the waveform.
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