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A VERTICAL GRADIENT FREE APPLIED BY AN AXIAL MAGNETIC FIELD AND A VERTICAL BRIDGMAN COMPOUND SEMICONDUCTOR SINGLE CRYSTAL GROWTH APPARATUS
A VERTICAL GRADIENT FREE APPLIED BY AN AXIAL MAGNETIC FIELD AND A VERTICAL BRIDGMAN COMPOUND SEMICONDUCTOR SINGLE CRYSTAL GROWTH APPARATUS
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机译:轴向磁场和垂直布里奇曼复合半导体单晶生长装置施加的垂直梯度自由度
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摘要
The present invention is a single crystal growth apparatus of vertical temperature gradient cooling and vertical bridging method that can apply a magnetic field of about 1600 gauss in the direction of crystal growth axis by installing a ring-shaped electromagnet around a high-temperature electric furnace, and changes in temperature gradient sensitive to crystal growth. In addition to forming a double tube through which the cooling water circulates inside the high-temperature electric furnace, a gold thin film is coated on the inner circumferential surface thereof, and a cylindrical insulation blanket or protection between the heating wire and the double tube is primarily used to absorb infrared rays emitted from the heating wire. By installing a quartz tube to effectively apply the magnetic field of the electromagnet, it is possible to grow a low defect, large diameter gallium arsenide single crystal.
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