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cathode sputtering, preferably of insulators on managerial targets

机译:阴极溅射,最好是管理靶上的绝缘体

摘要

Pulses of positive voltage are applied to the target of a dc sputtering process to create a reverse bias. This charges insulating deposits on the target to the reverse bias level, so that when negative sputtering voltage is reapplied to the target, the deposits will be preferentially sputtered away. The reverse bias pulses are provided at a low duty cycle, i.e., with a pulse width of 0.25 - 3 microseconds at a pulse rate of about 40 - 100 KHz. This technique reduces sources for arcing during a reactive sputtering process.
机译:将正电压脉冲施加到直流溅射过程的目标,以产生反向偏压。这将靶上的绝缘沉积物充电至反向偏压水平,因此当负溅射电压再次施加到靶上时,沉积物将优先被溅射掉。以低占空比,即以大约40-100KHz的脉冲速率以0.25-3微秒的脉冲宽度提供反向偏置脉冲。该技术减少了反应溅射过程中产生电弧的来源。

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