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Process of fabricating semiconductor device having doped polysilicon layer without segregation of dopant impurity
Process of fabricating semiconductor device having doped polysilicon layer without segregation of dopant impurity
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机译:具有掺杂的多晶硅层而没有掺杂杂质的偏析的半导体器件的制造方法
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摘要
An intentionally undoped amorphous silicon layer, a phosphorous doped amorphous silicon layer and a tungsten silicide layer are successively laminated on a gate oxide layer, and are patterned into a gate electrode of a field effect transistor; while a phosphosilicate glass layer over the gate electrode is being reflowed, the amorphous silicon layers are crystallized to a polysilicon layer, and phosphorous is less segregated at the boundary between the gate oxide layer and the polysilicon layer during the heat treatment.
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