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CHEMICAL AMPLIFICATION TYPE PHOTORESIST

机译:化学增幅型光刻胶

摘要

PROBLEM TO BE SOLVED: To increase dissolution contrast and to improve resolution performance by suppressing the occurrence of the reverse reaction in an elimination reaction of protective groups. ;SOLUTION: The chemical amplification type photoresist comprises a base resin having such characteristic that the resin becomes insoluble in a basic developing liquid when the specific positions of the resin are linked with protective groups and the resin becomes soluble in the basic developing liquid when the protective groups of the resin are eliminated, a photo-acid generating agent which generates hydrogen ion when it is exposed to light and an agent inhibiting reverse reaction. The base resin can be solubilized in the basic developing liquid by elimination of the protective group by the reaction of the base resin with hydrogen ion generated from the photo-acid generating agent and the solubilization of the base resin into the basic developing liquid is amplified by the generation of new hydrogen ion. The agent inhibiting reverse reaction inhibits recombination reaction of the eliminated protective groups to the base resin.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过抑制保护基团的消除反应中逆反应的发生,提高溶解对比度并改善分离性能。 ;解决方案:化学放大型光致抗蚀剂包含一种基础树脂,其特征在于,当树脂的特定位置与保护基相连时,该树脂将不溶于碱性显影液,而当保护膜被保护时,该树脂则可溶于碱性显影液。消除了树脂中的所有基团,光致酸生成剂在暴露于光线时产生氢离子,并且该试剂抑制逆反应。通过使基础树脂与由光酸产生剂产生的氢离子反应,通过消除保护基,可以将基础树脂溶解在基础显影液中,并通过以下方法使基础树脂增溶到基础显影液中。产生新的氢离子。抑制逆反应的试剂可抑制消除的保护基团与基础树脂的重组反应。;版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000010283A

    专利类型

  • 公开/公告日2000-01-14

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP19980171558

  • 发明设计人 YAMANA SHINJI;

    申请日1998-06-18

  • 分类号G03F7/039;G03F7/004;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 02:03:45

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