首页> 外国专利> METHOD FOR DECREASING IONIC MEMORY EFFECT OF FERROELECTRIC LIQUID CRYSTAL MATERIAL, FERROELECTRIC LIQUID CRYSTAL CELL, FERROELECTRIC LIQUID CRYSTAL DEVICE AND OPTICAL MODULATION DEVICE

METHOD FOR DECREASING IONIC MEMORY EFFECT OF FERROELECTRIC LIQUID CRYSTAL MATERIAL, FERROELECTRIC LIQUID CRYSTAL CELL, FERROELECTRIC LIQUID CRYSTAL DEVICE AND OPTICAL MODULATION DEVICE

机译:降低铁电液晶材料,铁电液晶细胞,铁电液晶装置和光调制装置的离子记忆效应的方法

摘要

PROBLEM TO BE SOLVED: To decrease the ionic memory effect of a ferroelectric liquid crystal material. ;SOLUTION: The method for decreasing the effect of the ionic memory of a ferroelectric liquid crystal(FLC) material impressed with a blanking pulse 84 and strobe pulse 88 as switching pulses includes the following two steps: In the first step, an ionic dopant to impart ions having high-speed response to the impressed electric field is added to the FLC material, and in the second step, TRIFLE(technique to reduce ionic field latching effect) pulse 86, 90 are made to follow the blanking pulse 84 and the strobe pulse 88. The TRIFLE pulse 86, 90 are the pulses of reverse polarities which decrease the ionic counter- electric fields formed by the blanking pulse 84 and the strobe pulse 88 and do not unstabilize the state switched by the blanking pulse 84 and the strobe pulse 88.;COPYRIGHT: (C)2000,JPO
机译:要解决的问题:降低铁电液晶材料的离子记忆效应。 ;解决方案:用于降低用消隐脉冲84和选通脉冲88作为切换脉冲施加的铁电液晶(FLC)材料的离子存储效应的方法包括以下两个步骤:在第一步中,将离子掺杂剂添加到在FLC材料中添加对被施加的电场具有高速响应的高能离子,然后在第二步骤中,使TRIFLE(减少离子场锁存效应的技术)脉冲86、90跟随消隐脉冲84和选通脉冲TRIFLE脉冲86、90是反极性的脉冲,其减小了由消隐脉冲84和选通脉冲88形成的离子反电场,并且不会使由消隐脉冲84和选通脉冲切换的状态不稳定88 .;版权:(C)2000,日本特许厅

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