首页> 外国专利> SUPERCONDUCTOR STRUCTURE WITH HIGH-T c? SUPERCONDUCTOR MATERIAL, METHOD FOR PRODUCING SAID STRUCTURE AND CURRENT-LIMITING DEVICE WITH A STRUCTURE OF THIS TYPE

SUPERCONDUCTOR STRUCTURE WITH HIGH-T c? SUPERCONDUCTOR MATERIAL, METHOD FOR PRODUCING SAID STRUCTURE AND CURRENT-LIMITING DEVICE WITH A STRUCTURE OF THIS TYPE

机译:具有高T c的超导体结构?超导体材料,具有这种类型的结构的所述结构和限流装置的制造方法

摘要

The superconductor structure for conducting an electric current in a predetermined direction has a metallic support and one or more conductor tracks. The conductor tracks have at least one electrically insulating interlayer deposited on the support and a high Tc superconductor layer deposited on the interlayer. Between its superconducting layer and the support, the conductor track has at least one connecting part, which extends in the current-conducting direction, for electrically connecting the superconducting layer and the support in parallel. The superconductor structure may be provided in particular for a current limiter device.
机译:用于沿预定方向传导电流的超导体结构具有金属支架和一个或多个导体轨道。导体迹线具有至少一个沉积在支撑体上的电绝缘夹层和沉积在该夹层上的高Tc超导体层。导体轨在其超导层和载体之间具有至少一个在电流传导方向上延伸的连接部件,用于将超导层和载体并联电连接。超导体结构可以特别地被提供用于电流限制器装置。

著录项

  • 公开/公告号EP1042820A1

    专利类型

  • 公开/公告日2000-10-11

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号EP19980965108

  • 发明设计人 RIES GUENTER;

    申请日1998-12-07

  • 分类号H01L39/16;

  • 国家 EP

  • 入库时间 2022-08-22 01:46:44

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