首页> 外国专利> Novel silicon structure, used for solar cells or LCD TFTs, comprises a crystalline textured silicon thin film over a biaxially textured lattice-matched diffusion barrier buffer layer on a thermal expansion-matched inert substrate

Novel silicon structure, used for solar cells or LCD TFTs, comprises a crystalline textured silicon thin film over a biaxially textured lattice-matched diffusion barrier buffer layer on a thermal expansion-matched inert substrate

机译:用于太阳能电池或LCD TFT的新型硅结构,包括在热膨胀匹配的惰性衬底上的双轴纹理晶格匹配的扩散势垒缓冲层上方的晶体纹理硅薄膜。

摘要

A structure (2) comprises a crystalline textured silicon thin film (5) over a biaxially textured lattice-matched diffusion barrier buffer layer (4) on a thermal expansion-matched inert substrate (3). In the structure (2): (a) the substrate (3) consists of a material which has a thermal expansion coefficient of not more than 3 times that of the silicon material, has a structure not affecting the buffer layer texture and is chemically and mechanically resistant to buffer layer and silicon layer deposition; and (b) the buffer layer (4) has a biaxial texture with one crystal axis perpendicular to the substrate surface, forms a diffusion barrier between the silicon layer and the substrate and exhibits lattice structure and lattice constant matching with the silicon layer material. An Independent claim is also included for production of the above structure. Preferred Features: The substrate consists of a glass or a preferably nickel -based metallic material.
机译:结构(2)包括在热膨胀匹配的惰性衬底(3)上的双轴纹理匹配的晶格匹配的扩散阻挡缓冲层(4)上的晶体纹理化的硅薄膜(5)。在结构(2)中:(a)衬底(3)由热膨胀系数不大于硅材料的热膨胀系数的三倍的材料构成,其结构不影响缓冲层的质地,并且在化学上和机械抗缓冲层和硅层沉积; (b)缓冲层(4)具有双轴织构,其中一个晶轴垂直于衬底表面,在硅层和衬底之间形成扩散势垒,并表现出与硅层材料匹配的晶格结构和晶格常数。对于上述结构的生产也包括独立权利要求。优选特征:基材由玻璃或优选镍基金属材料组成。

著录项

  • 公开/公告号DE10017137A1

    专利类型

  • 公开/公告日2000-10-26

    原文格式PDF

  • 申请/专利权人 SIEMENS AG;

    申请/专利号DE2000117137

  • 发明设计人 UTZ BERND;

    申请日2000-04-06

  • 分类号H01L21/203;H01L21/84;C30B25/18;H01L31/0392;H01L31/18;

  • 国家 DE

  • 入库时间 2022-08-22 01:41:54

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