首页> 外国专利> FLIGHT DIGITAL EDUCATION PIXELMATRIC DETECTOR AND DOSIMETRY OF IONIZING RADIATION IN EXCEPT TIME

FLIGHT DIGITAL EDUCATION PIXELMATRIC DETECTOR AND DOSIMETRY OF IONIZING RADIATION IN EXCEPT TIME

机译:飞行数字教育像素检测仪和电离辐射的超时期

摘要

A thin-film, flat panel, pixelated detector array serving as a real-time digital imager and dosimeter for diagnostic or megavoltage X rays or gamma rays, including a plurality of photodiodes made of hydrogenated amorphous silicon arrayed in columns and rows upon a glass substrate. Each photodiode is connected to a thin film field effect transistor also located upon the glass or quartz substrate. Upper and lower metal contacts are located below and above the photodiodes to provide the photodiodes with a reverse bias. The capacitance of each photodiode when multiplied by the resistance of the field effect transistor to which it is connected yields an RC time constant, tau RC, sufficiently small to allow fluoroscopic or radiographic imaging in real time. Specifically, IMAGE where P=the pixel-pixel pitch in mu m, where DIFFERENCE 25/=p/= DIFFERENCE 10,000, L=the length, in cm, of one column of pixels sensors of the array, where DIFFERENCE 2/=L/= DIFFERENCE 60, IFPS=instantaneous frame rate per second which is the effective rate at which the array is being readout, where DIFFERENCE 1/=IFPS/= DIFFERENCE 500, and SN=the inverse of the degree to which each pixel sensor needs to be sampled and thus recharged, where DIFFERENCE 10/=SN/= DIFFERENCE 10,000.
机译:薄膜,平板,像素化检测器阵列,用作诊断或兆伏X射线或伽马射线的实时数字成像仪和剂量计,包括多个由氢化非晶硅制成的光电二极管,这些光电二极管以行和列的形式排列在玻璃基板上。每个光电二极管都连接到也位于玻璃或石英基板上的薄膜场效应晶体管。上部和下部金属触点位于光电二极管的上方和下方,为光电二极管提供反向偏置。当每个光电二极管的电容乘以与其连接的场效应晶体管的电阻相乘时,会产生一个RC时间常数tau RC,该时间常数足够小,可以实时进行荧光或射线照相成像。具体来说,,其中P =以微米为单位的像素间距,其中DIFFERENCE 25

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号