Semiconductor integrated circuit device having fundamental cells and method of manufacturing the semiconductor integrated circuit device using the fundamental cells

摘要

A semiconductor integrated circuit having a plurality of fundamental cells respectively composed of a pair of p-channel field effect transistors and a pair of n-channel field effect transistors is disclosed. Elements of each fundamental cell are connected by lines, the fundamental cells are connected by lines, and a circuit is formed. The p- channel field effect transistors are formed in symmetry to each other, the n-channel field effect transistors are formed in symmetry to each other, one p-channel field effect transistor and one n-channel field effect transistor are formed in symmetry to each other, and the other p- channel field effect transistor and the other n-channel field effect transistor are formed in symmetry to each other. Also, a gate of each field effect transistor is formed in an H shape, and a line pitch between lines of a second layer is shorter than an arranging interval (or bulk pitch) between contact portions respectively connecting a line of a first layer and an element of the fundamental cell.