Strained multiple quantum well structures and semiconductor lasers using the same

摘要

PURPOSE: To provide a strain multiple-quantum-well structure without impairing light emitting characteristics even if the number of well layers is great. ;CONSTITUTION: On an n-type InP substrate 101, the following layers are alminated. An n-type InGaAsP waveguide layer 102 has no strain and has the wavelength composition of 1.05μm. A strain multiple-quantum-well active layer 105 comprises an InGaAsP well layer 103, wherein 14 layers of 1% compressive strain are introduced and the wavelength composition of 1.5μm is provided, and InGaAsP barrier layers 104 having the wavelength composition of 1.05μm without strain. A p-type InGaAsP waveguide layer 106 has no strain and has the wavelength composition of 1.05μm. A p-type InP clad layer 107 is also laminated. Furthermore, an InP layer 108 having a thickness of 1 nm is inserted between the barrier layer 104 and the strain well layer 103, which is located at the side of the substrate 101 of the barrier layer 104. Therefore, even if the well layers are increased as many as 14, the amount of the strain of each well layer becomes equal, and the excellent light emitting characteristics can be obtained.;COPYRIGHT: (C)1995,JPO