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ZnSe SUBSTRATE, METHOD FOR HEAT-TREATING THE SAME AND METHOD FOR PRODUCING ZnSe-BASED THIN FILM AND LUMINESCENT ELEMENT
ZnSe SUBSTRATE, METHOD FOR HEAT-TREATING THE SAME AND METHOD FOR PRODUCING ZnSe-BASED THIN FILM AND LUMINESCENT ELEMENT
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机译:ZnSe基质,用于热处理的方法以及生产ZnSe基薄膜和发光元素的方法
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摘要
PROBLEM TO BE SOLVED: To provide a ZnSe substrate for vapor phase epitaxial growth having 500 cm2 dislocation density in the substrate and capable of suppressing occur rence of deposition while utilizing excellent crystallinity, a method for heat- treating the substrate, a method for producing epitaxial thin film using the substrate and a luminescent element using the thin film.;SOLUTION: This ZnSe substrate for vapor phase epitaxial growth is characterized in that the dislocation density is 500 cm-1 and the carrier density is within the range of 5×1016 to 5×1017. This method for heat-treating the substrate, this method for subjecting the ZnSe-based crystal thin film to epitaxial growth on the substrate and this luminescent element using the thin film are provided.;COPYRIGHT: (C)2001,JPO
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