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METHOD FOR PRODUCING HIGH PLANARITY SEMICONDUCTOR WAFER, AND HIGH PLANARITY SEMICONDUCTOR WAFER
METHOD FOR PRODUCING HIGH PLANARITY SEMICONDUCTOR WAFER, AND HIGH PLANARITY SEMICONDUCTOR WAFER
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机译:高平面度半导体晶片的制造方法以及高平面度半导体晶片
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摘要
PROBLEM TO BE SOLVED: To provide a method for producing a high planarity semiconductor wafer and a high planarity semiconductor wafer, in which high planarity is attained for every site through plasma etching.;SOLUTION: The method for producing a high planarity semiconductor wafer by machining the surface of a semiconductor wafer through plasma etching comprises a step for measuring irregularities on the surface to be machined, and a step for locally plasma etching the surface to be machined, while varying the etching amount depending on the irregularities measured in a step for machining the surface to be machined thus planarizing the surface to be machined, wherein the plasma machining step separates the period of the irregularities D0 into a high-frequency component DH and a low-frequency component DL, based on a preset boundary frequency and uses only the irregularities of high frequency component for machining.;COPYRIGHT: (C)2001,JPO
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