MAGNETORESISTANCE EFFECT DEVICE AND METHOD FOR MANUFACTURING THE SAME, BASE FOR MAGNETORESISTANCE EFFECT DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND MAGNETORESISTANCE EFFECT SENSOR

摘要

A magnetoresistance effect device having a structure of artificial lattice or spin-bulb type, a high MR ratio with as small a quantity of oxygen as possible in a multiplayer structure, and an excellent thermal stability. The magnetoresistance effect device having a structure where alternated nonmagnetic layers and ferromagnetic layers formed on a base or where alternated nonmagnetic layers and ferromagnetic layers formed on a base and a nonferromagnetic layer formed on the uppermost ferromagnetic layer, is characterized in that a buffer member is provided on the base-side surface of the ferromagnetic layer nearest to the base and consists of at least one first element selected from Si, B, C, and Ge and at least one second element selected from Fe, Ti, Cr, Mn, Co, Ni, Cu, Zr, Hf, and Ta.