ANTI-FUSE OF THREE-ELECTRODE STRUCTURE AND METHOD FOR MAKING MERGED MEMORY LOGIC(MML) SEMICONDUCTOR DEVICE

摘要

PURPOSE: Anti-fuse of three-electrode structure and a method for making a merged memory logic semiconductor device are provided to reduce a substrate occupation area by integrating a method for making an analog capacitor having a high breakdown voltage with a method for making an anti-fuse having a low breakdown voltage as one. CONSTITUTION: The first and second conductive patterns are formed to be separated from each other. The first and second insulation sidewall spacers are formed on sidewalls opposed by the first and second conductive patterns. The third conductive pattern is positioned between the sidewall spacers. The first conductive pattern functions as the first electrode(101b), and the second conductive pattern functions as the second electrode(101c). The third conductive pattern functions as the third electrode(107). Under the condition that the third electrode is at a floating state, a breakdown voltage of the first and second sidewall spacers is applied on the first and second electrodes. Thereby, a substrate occupation area is reduced and thus a production cost is also reduced.