3 HARDWARE DESIGN SYSTEM CONFIGURATION AND PROCESS SEQUENCE FOR IMPROVED SEED LAYER PRODUCTIVITY AND ACHIEVING 3MM EDGE EXCLUSION FOR A COPPER METALIZATION PROCESS ON SEMICONDUCTOR WAFER

摘要

PURPOSE: A hardware design, system constitution and processing procedure are provided to achieve high throughput and minimal edge exclusion. CONSTITUTION: The method for forming a metal layer on a substrate comprises the following steps of depositing a full coverage seed layer over the substrate; electrochemically depositing a metal layer over the seed layer, and removing any exposed seed layer from an annular edge portion of the substrate. The apparatus for forming is metal layer on a substrate comprises: an electrochemical deposition cell(200) having a cathode contact member(208) adapted to contact a peripheral portion of a substrate at less than about 3mm from an edge of the substrate, a processing cell adapted to remove any exposed seed layer on a peripheral portion of the substrate; and a transfer chamber having a robot adapted to transfer a substrate between the electrochemical deposition cell and the processing cell for removing exposed seed layer.