首页>
外国专利>
A S-Parameter-Measurement-Based High-Speed Signal Transient Characterization of VLSI Interconnects on SiO2-Si Substrate
A S-Parameter-Measurement-Based High-Speed Signal Transient Characterization of VLSI Interconnects on SiO2-Si Substrate
展开▼
机译:基于S参数测量的SiO2-Si衬底上VLSI互连的高速信号瞬态特性
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A measurement method of a transient phenomenon of a high speed digital signal is provided to measure variations of pulse signals under dozens of pico seconds in a very short time range by using an S parameter for stably measuring high frequency components. CONSTITUTION: The method comprises the steps of making test patterns, measuring an S parameter of a DUT(Device Under Test) from a low frequency to a high frequency by using a vector network analyzer, measuring an S parameter of an open pad also from a low frequency to a high frequency, calculating the S parameter by eliminating a parasitic effect for obtaining the S parameter of pure signal lines, obtaining a characteristic impedance and an electric wave constant of a transmission line on each measurement frequency, expressing mathematically an input function in a frequency domain, expressing a system function in a frequency domain by using the characteristic impedance and the electric wave constant, calculating the system response function in a frequency domain and converting the calculated result in a time domain.
展开▼