DMOS cell consists of a DMOS transistor and a Schottky diode formed in the contact hole between the source-contact layer and the drain zone of the transistor

摘要

DMOS cell consists of DMOS transistor (11) and Schottky diode (12) which lie parallel to the source-drain path of the transistor. The source zone (6) of the transistor is in contact with a source-contact layer (7, 14) via a contact hole (8) in a gate insulating layer (9). The Schottky diode is formed in the contact hole between the source-contact layer and the drain zone (1, 2) of the transistor. Preferred Features: The source-contact layer is provided with a Schottky metallization (13) made from tungsten silicide, tantalum silicide, platinum silicide or molybdenum silicide, and has a plug (14) made from conducting polycrystalline silicon.