Semiconductor device with bipolar transistor, has emitter and base contact regions which are separated by preset gap, so that current amplification factor of transistor is within specific range

摘要

N+ and N--type emitter regions (8b,9b) and a P-type base contact region (10a) having high doping concentration, are formed on surface of base region (7). The emitter and base contact regions are separated by preset gap, so that current amplification factor of transistor, is within specific range. The N-type collector region is formed on the silicon substrate (1). The P-type base region is formed in the N-type collector region.