Formation method of resist pattern for ion implantation, involves forming anti-reflective coating and resist on substrate, patterning resist to form hole and removing portions of coating exposed to bottom of hole

摘要

An organic anti-reflective coating (503) and a resist are sequentially formed on a semiconductor substrate (501). The resist is patterned to form a hole and portion of the organic anti-reflective coating exposed to bottom portion of the hole in the resist pattern is removed, to form a resist pattern (508). Independent claims are also included for the following: (i) manufacturing method of semiconductor device which involves forming a resist pattern on a semiconductor substrate and carrying out ion implantation to the surface of a semiconductor substrate using the resist pattern; and (ii) removal apparatus of organic type anti-reflective coating, which has a reaction container for receiving the substrate with anti-reflective coating, heating unit to heat the substrate and ozone supply unit to supply ozone at interior of the reaction chamber.