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Methods for making VLSI capacitors and high Q VLSI inductors using metal- filled via plugs
Methods for making VLSI capacitors and high Q VLSI inductors using metal- filled via plugs
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机译:使用金属填充通孔塞制造VLSI电容器和高Q VLSI电感器的方法
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摘要
Disclosed are methods of making inductors and capacitors, comprising filling a via in a dielectric disposed between two metal layers with a metal plug. The plug comprises tungsten, aluminum or copper and extends the length of the metal layers. The plug connects the two metal layers to form the inductor. Two plugs can be formed so as to connect the two metal layers so as to form a parallel plate capacitor.
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