Leaf type plasma oh singing device

摘要

PROBLEM TO BE SOLVED: To uniformly strip a resist on a wafer surface, while keeping the wafer temp. uniform at a low temp. in a single-wafer processing plasma ashing developing apparatus.;SOLUTION: Protrusions 1 point-contacted to a central part of a wafer 10 and arcuate protrusions 2 line-contacted to the periphery of the wafer 10 are provided on a stage 3, the wafer 10 is mounted on these protrusions, a heating block 4 having a much higher heat capacity and held at a constant temp. is fixed to the stage 3, to transfer the heat of the block 4 to the wafer 10 via the arcuate protrusions 2, thereby uniformly heating the wafer 10 to keep desired temp. inside the wafer 10 surface.;COPYRIGHT: (C)2001,JPO