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Possess various energy band gap quantum well formation the guided wave path forma optical component and its production manner

机译:具备各种能带隙量子阱形成的导波路径形式的光学部件及其生产方式

摘要

PROBLEM TO BE SOLVED: To provide an waveguide photoelement having at least exceeding two positions of regions with dissimilar energy band gap quantum well layer and its manufacture. SOLUTION: An InGaAs cap layer laminated on a quantum well layer 13, whereon at least exceeding a pair of InGaAs and InP layer is laminated after the formation of an SiO2 coating layer, is annealed at high temperature so as to form a band gap energy conversing region wherein the energy band gap in a specific region of the InGaAs/InP quantum well layer 13 is converted. Through these procedures, an waveguide photo element having dissimilar energy band gap quantum well layer laser-oscillating in different wavelength can be manufactured.
机译:解决的问题:提供一种具有至少两个以上具有不同能带隙量子阱层的区域的位置的波导光电元件及其制造。解决方案:层叠在量子阱层13上的InGaAs盖层,在形成SiO2涂层后至少层叠一对InGaAs和InP层,然后在高温下进行退火,以形成能带隙能量转换InGaAs / InP量子阱层13的特定区域中的能带隙被转换的区域。通过这些过程,可以制造具有在不同波长下激光振荡的不同能带隙量子阱层的波导光电元件。

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