METHOD OF FORMING COMPACT PEROVSKITE METALLIC OXIDE THIN FILM AND COMPACT PEROVSKITE METALLIC OXIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To form perovskite metallic oxide thin film which can coat with thick film of 0.1 μm or more by once application, and is very compact and excellent in characteristics such as dielectric or conductive characteristics at comparatively low firing temperature of 1000°C or lower.;SOLUTION: A method of forming the perovskite metallic oxide thin film comprises the steps where liquid of raw material for forming metallic oxide thin film is applied to a substrate, the metallic oxide is crystallized and the perovskite metallic oxide film is formed by heating; the perovskite metallic oxide obtained from liquid phase part of applying liquid, forms low density film structured with granular crystal of mean grain size 200 nm or less, and compact perovskite metallic oxide thin film is obtained by sintering this low density film.;COPYRIGHT: (C)2002,JPO