Semiconductor processing method, method of forming DRAM circuitry, method of depositing a tungsten comprising layer over a substrate, method of forming a transistor gate line over a substrate, method of forming a patterned substantially crystalline Ta2O5 comprising material, and method of forming a capacitor dielectric region comprising substantially crystalline Ta2O5 comprising material

摘要

In part, disclosed are semiconductor processing methods, methods of depositing a tungsten comprising layer over a substrate, methods of depositing a tungsten nitride comprising layer over a substrate, methods of depositing a tungsten silicide comprising layer over a substrate, methods of forming a transistor gate line over a substrate, methods of forming a patterned substantially crystalline Ta₂O₅ comprising material, and methods of forming a capacitor dielectric region comprising substantially crystalline Ta₂O₅ comprising material. In one implementation, a semiconductor processing method includes forming a substantially amorphous Ta₂O₅ comprising layer over a semiconductive substrate. The layer is exposed to WF₆ under conditions effective to etch substantially amorphous Ta₂O₅ from the substrate. In one implementation, the layer is exposed to WF₆ under conditions effective to both etch substantially amorphous Ta₂O₅ from the substrate and deposit a tungsten comprising layer over the substrate during the exposing.