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Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds
Method and design for the suppression of single event upset failures in digital circuits made from GaAs and related compounds
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机译:用于抑制由砷化镓和相关化合物制成的数字电路中的单事件翻转失败的方法和设计
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摘要
Single event upset failure are suppressed in GaAs-based electronics by implanting the GaAs substrate with an appropriate dose of O and at least one of either Al, Cr, or In.
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