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IMPROVED TRENCH ISOLATION PROCESS TO DEPOSIT A TRENCH FILL OXIDE PRIOR TO SIDEWALL LINER OXIDATION GROWTH
IMPROVED TRENCH ISOLATION PROCESS TO DEPOSIT A TRENCH FILL OXIDE PRIOR TO SIDEWALL LINER OXIDATION GROWTH
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机译:改进的沟槽隔离工艺,可在侧壁衬里氧化生长之前沉积沟槽填充氧化物
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摘要
This invention relates generally to a method of trench isolation used in the fabrication of semiconductor devices, wafers and the like. More specifically, the present invention related to a method of trench isolation using chemical vapor deposition (CVD) with TEOS and ozone to deposit a trench fill oxide prior to growing a thermal oxide layer or liner on sidewalls of the trench. The method provides void-free as-deposited dielectric CVD films into gaps or trenches with non-vertical, vertical and or re-entrant profiles.
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