LOW DIELECTRIC THIN FILM GROWTH USING PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION METHOD

摘要

PURPOSE: A low dielectric SiCFO thin film growth using a plasma-enhanced chemical vapor deposition(PECVD) method is provided to be used as an interlayer dielectric of a metal interconnection, by growing the SiCFO thin film at a low temperature such that the SiCFO thin film has a low dielectric constant and thermal stability. CONSTITUTION: A Si-C-F-O based dielectric thin film having a low dielectric constant(k is from 1.2 to 2.2) is fabricated by a PECVD method. Gas or liquid containing SiCH4, (CH3)3SiC-CSi(CH3)3, £(CH3)3Si|sCH2, £(CH3)3Si|2S, (CH3)3CSi(CH3)2Cl, (CH3)2SiCl2, (CH3)2Si(OC2H5)2, £(CH3)2Si-|n, C2H5SiCl3, (CH3)3SiSi(CH3)3, (CH3)3SiCl, (CH3)3SiOC2H5, (CH3)3SiH, (CH3)3SiCCH, (C5H5)Si(CH3)3, SiF4, COF2, ClF3, C(CF3)2C, CH3F, (CF3)2CO, C2F3N, CF4, NF3, NH3, O2 and O3 is used as a raw material.